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HiPerFET TM
Power MOSFETs
Q-Class
IXFH 9N80Q
IXFT 9N80Q
V DSS
I D25
R DS(on)
= 800 V
= 9A
= 1.1 ?
N-Channel Enhancement Mode
Avalanche Rated Low Q g , High dv/dt
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
V GS
V GSM
I D25
I DM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C
T C = 25 ° C,
800
800
± 20
± 30
9
36
V
V
V
V
A
A
I AR
E AR
pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
9
20
A
mJ
TO-268 (D3) ( IXFT)
E AS
dv/dt
P D
T J
T JM
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
700
5
180
-55 ... +150
150
mJ
V/ns
W
° C
° C
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
T stg
-55 ... +150
° C
T L
M d
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.13/10
° C
Nm/lb.in.
Weight
TO-247
6
g
Features
Symbol
TO-268
Test Conditions
4 g
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
l
l
l
IXYS advanced low Q g process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
V DSS
V GS = 0 V, I D = 1 mA
800
V
l
l
Low R DS (on)
Unclamped Inductive Switching (UIS)
V GS(th)
V DS = V GS , I D = 2.5 mA
3.0
5.0
V
l
rated
Molding epoxies meet UL 94 V-0
Easy to mount
Space savings
High power density
I GSS
I DSS
R DS(on)
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
± 100
50
1
1.1
nA
μ A
mA
?
flammability classification
Advantages
l
l
l
? 1999 IXYS All rights reserved
98629 (6/99)
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